The 2SJ607 is P-channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES • Super low on-state resistance: RDS(on)1 = 11 m? MAX. (VGS = -10 V, ID = -42 A) RDS(on)2 = 16 m? MAX. (VGS = -4.0 V, ID = -42 A) • Low input capacitance: Ciss = 7500 pF TYP. (VDS = -10 V, VGS = 0 V) • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS -60 V Gate to Source Voltage (VDS = 0 V) VGSS m 20 V Drain Current (DC) (TC = 25°C) ID(DC) m 83 A Drain Current (pulse) Note1 ID(pulse) m 332 A Total Power Dissipation (TC = 25°C) PT 160 W Total Power Dissipation (TA = 25°C) PT 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg -55 to +150 °C Single Avalanche Current Note2 IAS -50 A Single Avalanche Energy Note2 EAS 250 mJ
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